UB researchers mix silicon with 2D materials for new semiconductor technology
Researchers from the University at Buffalo; Central South University in Changsha, China; Shandong Normal University in Jinan, China; TU Wien in Vienna, Austria; the University of Salerno in Italy; and Sungkyunkwan University in Suwon, South Korea, have demonstrated that using thin two-dimensional (2D) materials, like the semiconductor molybdenum disulfide (MoS2), in combination with silicon can create highly efficient electronic devices with excellent control over how an electrical charge is injected and transported.