Researchers from MIT, Columbia University, and the National Institute for Materials Science in Tsukuba, Japan, have engineered a new property into a well-known family of semiconductors, called transition metal dichalcogenides, by manipulating ultrathin sheets of the materials only a few atomic layers thick. The researchers showed that when two single sheets of a transition metal dichalcogenide are stacked parallel to each other, the material becomes ferroelectric. In a ferroelectric material, positive and negative charges spontaneously head to different sides.
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