Specially designed transistors allow researchers to ‘hear’ defects in a promising nanomaterial
Researchers from New York University, the U.S. Department of Energy’s Brookhaven National Laboratory, the Korea Advanced Institute of Science and Technology, and the National Institute for Materials Science in Tsukuba, Japan, have pioneered a new technique to identify and characterize atomic-scale defects in a two-dimensional (2D) material called hexagonal boron nitride. The team was able to detect the presence of individual carbon atoms replacing boron atoms in this material.