(Funded by the National Institute of Standards and Technology and the National Science Foundation)
Researchers from Penn State, Purdue University, Intel Corporation (Santa Clara, CA), The Kurt J. Lesker Company (Jefferson Hills, PA), and National Yang Ming Chiao Tung University in Taiwan have developed a process to produce a “rust-resistant” coating with additional properties ideal for creating faster, more durable electronics. Traditional methods to protect two-dimensional (2D) semiconductor materials from rusting involve oxide-based coatings, but these processes often use water, which can accelerate the oxidation they aim to prevent. The team’s approach was to use amorphous boron nitride as a coating material, which was evenly coated on the 2D materials by using a new two-step atomic layer deposition method.
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