DNA-like material could bring even smaller transistors

Date posted
Funding Agency
(Funded by the Defense Advanced Research Projects Agency, the Office of Naval Research, the Army Research Office, the Air Force Office of Scientific Research and the National Science Foundation)

Researchers have found that a material shaped like a one-dimensional DNA helix, encapsulated in a nanotube made of boron nitride, helps build a field-effect transistor with a diameter of two nanometers. Transistors on the market are made of bulkier silicon and range between 10 and 20 nanometers in scale. The work was performed by engineers at Purdue University in collaboration with Michigan Technological University, Washington University in St. Louis, and the University of Texas at Dallas.